FGA180N33ATD_13 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery Cyrrent
Q_rr
Diode Reverse Recovery Charge
Test Conditions
I_F = 20A
I_ES =20A,
dI/dt = 200A/µs
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
Min.
-
-
-
-
-
-
-
-
Typ.
1.2
1.04
27
39
3.5
6.0
48
117
Max
1.6
-
-
-
-
-
-
-
Unit
V
ns
A
nC
©2011 Fairchild Semiconductor Corporation
3
FGA180N33ATD Rev. C0
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