FGA180N33ATD_13 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
T_C = 25^oC
10V
20V
9V
150
8V
15V
12V
100
7V
50
V_GE = 6V
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
200
Common Emitter
V_GE = 15V
T_C = 25^oC
150 _{TC = 125oC}
100
Figure 2. Typical Output Characteristics
200
T_C = 125^oC
10V
20V
9V
150
8V
15V
12V
100
7V
50
V_GE = 6V
0
0
2
4
6
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
200
Common Emitter
V_CE = 20V
T_C = 25^oC
150 _{TC = 125}o_C
100
50
50
0
0
1
2
3
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.1
Common Emitter
V_GE = 15V
1.8
180A
0
2
4
6
8
10
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
1.5
90A
1.2
40A
0.9
I_C = 20A
0.6
25
50
75
100
125
150
Collector-EmitterCase Temperature, T_C [^oC]
12
8
180A
90A
4
40A
I_C = 20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2011 Fairchild Semiconductor Corporation
4
FGA180N33ATD Rev. C0
www.fairchildsemi.com