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FGA180N33ATD_13 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT
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Package Marking and Ordering Information
Packaging
Device Marking
Device
FGA180N33ATD FGA180N33ATDTU
Package
TO-3P
Type
Tube
Qty per Tube
30ea
Max Qty per
Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 400µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250uA, VCE = VGE
IC = 40A, VGE = 15V
IC = 180A, VGE = 15V,
IC = 180A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 40A,
VGE = 15V
330
-
-
V
-
-
400
µA
-
-
±400
nA
2.5
4.0
5.5
V
-
1.1
1.4
V
-
1.68
-
V
-
1.89
-
V
-
3880
-
pF
-
305
-
pF
-
180
-
pF
-
27
-
ns
-
80
-
ns
-
108
-
ns
-
180
240
ns
-
26
-
ns
-
75
-
ns
-
112
-
ns
-
250
300
ns
-
169
-
nC
-
22
-
nC
-
69
-
nC
©2011 Fairchild Semiconductor Corporation
2
FGA180N33ATD Rev. C0
www.fairchildsemi.com
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