FGA180N33ATD_13 Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 330 V PDP Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
2000
1000
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
100
t_f
t_d(off)
t_r
t_d(on)
100
10 30
60
90 120 150 180
Collector Current, I_C [A]
10 _{Common Emitter}
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
1
10 30
60
90
120 150 180
Collector Current, I_C [A]
Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics
500
100
100
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
400
Collector-Emitter Voltage, V_CE [V]
T_J = 25^oC
10
T_J = 125^oC
T_C = 25^oC
T_C = 125^oC
1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, V_F [V]
©2011 Fairchild Semiconductor Corporation
6
FGA180N33ATD Rev. C0
www.fairchildsemi.com