FXLA2203 Datasheet, PDF (6/16 Pages) Fairchild Semiconductor – Dual-Mode, Dual-SIM-Card Level Translator

DC Electrical Characteristics
T_A=-40°C to +85°C; pins EN, CH_Swap.
Symbol
Parameter
V_IL Low-Level Input Voltage
V_IH High-Level Input Voltage
IL _{Input Leakage Current}
I_{CCT Increase in ICC per Pin}
Conditions
V_I=V_CC or GND, I/O Floating
V_IN=1.8V
V_IN=0.9V
V_CC (V)
3.60
1.80
3.60
1.80
1.65 – 3.60
3.60
1.80
Min.
1.2
0.9
Max.
0.65
0.45
±1
12
10
Unit
V
V
V
V
µA
µA
µA
DC Electrical Characteristics
T_A=-40°C to +85°C; pins RST_1, RST_2, RST_H_1, RST_H_2, CLK_1, CLK_2, CLK_H_1, CLK_H_2.
Symbol Parameter
Conditions V_{CC_H_n} (V) V_CCn (V)
V_IL
Low-Level Input
Voltage
1.65 – 3.60 1.65 – 3.60
V_IH
High-Level Input
Voltage
1.65 – 3.60 1.65 – 3.60
V_OL
Low-Level Output
Voltage
I_OL=20µA
1.65 – 3.60 1.65 – 3.60
V_OH
High-Level Output
Voltage
I_OH=-20µA
1.65 – 3.60 1.65 – 3.60
I_I
Input Leakage
Current
V_I=V_CC or GND 1.65 – 3.60
3.60
I_OFF
Power-Off Leakage
Current
V_O=0V to 3.6V
3.60
0
I_OZ
3-State Output
Leakage
V_O=0V or 3.6V,
EN=GND
V_O=0V or 3.6V,
EN=1
3.60
0
3.60
3.60
I_CC
Quiescent Supply
Current
V_I=V_CC or GND;
I_O=0, EN=V_CC,
I/O Floating
1.65 – 3.60 1.65 – 3.60
I_CCZ
Power-Down Supply V_I=V_CC or GND;
Current
I_O=0, EN=GND
1.65 – 3.60 1.65 – 3.60
R_ONPS
Power Switch On
Resistance, EN=1
I_ON=50mA,
VCCn to
VCC_Cardn
1.65 – 3.60 1.65 – 3.60
R_OFPS
Power Switch OFF
Resistance, EN=0
CH_Swap=0 and
1, V_CC1/2=3.3V
1.65 – 3.60
1.80 – 3.60
Min.
0.65 x
V_{CC_H_n}
0.80 x
V_CCn
Typ.
0.5
50
Max.
0.35 x
V_{CC_H_n}
0.12 x
V_CCn
±1
±1
±1
±1
3
3
0.8
Unit
V
V
V
V
µA
µA
µA
µA
µA
Ω
MΩ
© 2010 Fairchild Semiconductor Corporation
FXLA2203 • Rev. 1.0.5
6
www.fairchildsemi.com