FGK60N6S2D Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves (Continued)
80
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
60
40
125^oC
25^oC
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_EC, FORWARD VOLTAGE (V)
Figure 19. Diode Forward Current vs Forward
Voltage Drop
300
dI_EC/dt = 200A/µs, V_CE = 390V
250
200
150
100
25^oC t_a, t_b
50
125^oC t_rr
125^oC t_b
125^oC t_a
25^oC t_rr
0
4
8 12 16 20 24 28 32 36 40
I_EC, FORWARD CURRENT (A)
Figure 20. Recovery Times vs Forward Current
250
200
125^oC t_b
150
I_EC = 40A, V_CE = 390V
100
25^oC t_a
50
125^oC t_a
25^oC t_b
0
200 300 400 500 600 700 800 900
dI_EC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 21. Recovery Times vs Rate of Change of
Current
2.00
1.75
V_CE = 390V
125^oC, I_EC = 40A
1.50
1.25
125^oC, I_EC = 20A
1.00
0.75
0.50
25^oC, I_EC = 40A
0.25
25^oC, I_EC = 20A
0
200
300 400 500 600 700 800 900
dI_EC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
Figure 22. Stored Charge vs Rate of Change of
Current
4.0
V_CE = 390V, T_J = 125°C
3.5
I_EC = 40A
3.0
2.5
2.0
1.5
I_EC = 20A
1.0
0.5
0
200
300 400 500 600 700 800 900
dI_EC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
40
V_CE = 390V, T_J = 125°C
35
30
I_EC = 40A
25
I_EC = 20A
20
15
10
5
200
300 400 500 600 700 800 900
dI_EC/dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1