FGK60N6S2D Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves (Continued)
200
DUTY CYCLE < 0.5%, V_CE = 10V
175 ^{PULSE DURATION = 250µs}
150
125
100
T_J = 25^oC
75
50
T_J = 125^oC
25
T_J = -55^oC
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
5
R_G = 3Ω, L = 100µH, V_CE = 390V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
4
I_CE = 80A
3
2
I_CE = 40A
1
I_CE = 20A
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 15. Total Switching Loss vs Case
Temperature
16
I_G(REF) = 1mA, R_L = 7.5Ω
14
12
10
V_CE = 600V
8
V_CE = 400V
6
4
V_CE = 200V
2
0
0
20
40
60
80
100 120 140
Q_G, GATE CHARGE (nC)
Figure 14. Gate Charge
100
T_J = 125^oC, L = 100µH, V_CE = 390V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
10
I_CE = 80A
1
I_CE = 40A
I_CE = 20A
0.1
1
10
100
1000
R_G, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
10
FREQUENCY = 1MHz
C_IES
2.8
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
2.6
1
2.4
C_OES
0.1
C_RES
0.01
0
20
40
60
80
100
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter
Voltage
2.2
I_CE = 60A
2.0
I_CE = 40A
1.8
1.6
6
I_CE = 20A
789
10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1