FGK60N6S2D Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

June 2002
FGK60N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth^TM Diode
General Description
The FGK60N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49346
Diode formerly Developmental Type TA49393
Features
• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125^oC
• Low Gate Charge . . . . . . . . 140nC at V_GE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
Package
JEDEC STYLE STRETCH TO-247
E
C
G
Symbol
C
G
E
Device Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV_CES Collector to Emitter Breakdown Voltage
600
V
I_C25
Collector Current Continuous, T_C = 25°C
75
A
I_C110
Collector Current Continuous, T_C = 110°C
75
A
I_CM
Collector Current Pulsed (Note 1)
320
A
V_GES
Gate to Emitter Voltage Continuous
±20
V
V_GEM Gate to Emitter Voltage Pulsed
±30
V
SSOA Switching Safe Operating Area at T_J = 150°C, Figure 2
200A at 600V
E_AS
Pulsed Avalanche Energy, I_CE = 30A, L = 1mH, V_DD = 50V
700
mJ
P_D
Power Dissipation Total T_C = 25°C
625
W
Power Dissipation Derating T_C > 25°C
5
W/°C
T_J
Operating Junction Temperature Range
-55 to 150
°C
T_STG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1