FGK60N6S2D Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves
175
TJ = 150^oC
150
125
100
PACKAGE LIMITED
75
50
25
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 1. DC Collector Current vs Case
Temperature
1000
500
T_J = 125^oC, R_G = 3Ω, L = 100µH, V_CE = 390V
T_C = 75^oC
100
50
30
5
f_MAX1 = 0.05 / (t_d(OFF)I + t_d(ON)I)
f_MAX2 = (P_D - P_C) / (E_ON2 + E_OFF)
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.2^oC/W, SEE NOTES
V_GE = 15V
V_GE = 10V
10
30
50
100
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Operating Frequency vs Collector to
Emitter Current
80
DUTY CYCLE < 0.5%, V_GE = 10V
70 ^{PULSE DURATION = 250µs}
60
50
40
T_J = 125^oC
30
20
T_J = 150^oC
T_J = 25^oC
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
225
T_J = 150^oC, R_G = 3Ω, V_GE = 15V, L = 100µH
200
175
150
125
100
75
50
25
0
0
100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Minimum Switching Safe Operating Area
16
V_CE = 390V, R_G = 3Ω, T_J = 125^oC
14
1100
1000
12
900
I_SC
10
800
8
700
6
600
t_SC
4
500
2
400
0
300
9
10
11
12
13
14
15
16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
80
DUTY CYCLE < 0.5%, V_GE = 15V
70 ^{PULSE DURATION = 250µs}
60
50
40
T_J = 125^oC
30
T_J = 25^oC
20
T_J = 150^oC
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1