FGK60N6S2D Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves (Continued)
4.0
R_G = 3Ω, L = 100µH, V_CE = 390V
3.5
3.0
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
2.5
2.0
1.5
1.0
0.5
0
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
32
R_G = 3Ω, L = 100µH, V_CE = 390V
30
28
26
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
24
22
20
18
16
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
14
12
0
10
20
30
40
50
60
70
80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
120
R_G = 3Ω, L = 100µH, V_CE = 390V
100
V_GE = 10V, V_GE = 15V, T_J = 125^oC
80
60
V_GE = 10V, V_GE = 15V, T_J = 25^oC
40
20
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
©2002 Fairchild Semiconductor Corporation
2.00
R_G = 3Ω, L = 100µH, V_CE = 390V
1.75
1.50
1.25
1.00
0.75
T_J = 125^oC, V_GE = 10V, V_GE = 15V
0.50
0.25
0.0
0
T_J = 25^oC, V_GE = 10V, V_GE = 15V
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
90
R_G = 3Ω, L = 100µH, V_CE = 390V
80
70
60
50
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
40
30
20
10
0
0
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
90
R_G = 3Ω, L = 100µH, V_CE = 390V
80
70
T_J = 25^oC, T_J = 125^oC, V_GE = 10V
60
50
40
T_J = 25^oC, T_J = 125^oC, V_GE = 15V
30
20
0
10 20 30 40 50 60 70 80
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 12. Fall Time vs Collector to Emitter
Current
FGK60N6S2D Rev. A1