FGK60N6S2D Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Package Marking and Ordering Information
Device Marking
60N6S2D
Device
FGK60N6S2D
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics T_J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BV_CES Collector to Emitter Breakdown Voltage I_C = 250µA, V_GE = 0
600
I_CES Collector to Emitter Leakage Current V_CE = 600V T_J = 25°C
-
T_J = 125°C -
I_GES Gate to Emitter Leakage Current
V_GE = ± 20V
-
-
-
V
-
250
µA
-
3
mA
-
±250 nA
On State Characteristics
V_CE(SAT) Collector to Emitter Saturation Voltage I_C = 40A,
T_J = 25°C
-
1.9
2.5
V
V_GE = 15V
T_J = 125°C
-
1.65 2.2
V
V_EC
Diode Forward Voltage
I_EC = 40A
-
2.1
2.6
V
Dynamic Characteristics
Q_G(ON) Gate Charge
V_GE(TH)
V_GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I_C = 40A,
V_GE = 15V
-
V_CE = 300V _{VGE = 20V}
-
140
175
nC
180
228
nC
I_C = 250µA, V_CE = V_GE
3.5
4.3
5.0
V
I_C = 40A, V_CE = 300V
-
6.5
8.0
V
Switching Characteristics
SSOA Switching SOA
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
t_d(ON)I
t_rI
t_d(OFF)I
t_fI
E_ON1
E_ON2
E_OFF
t_rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
T_J = 150°C, R_G = 3Ω, V_GE = 200
-
15V, L = 100µH, V_CE = 600V
-
A
IGBT and Diode at T_J = 25°C, -
18
-
ns
I_CE =40A,
-
15
-
ns
V_CE = 390V,
V_GE = 15V,
R_G =3Ω
L = 100µH
-
70
-
ns
-
50
-
ns
-
400
-
µJ
Test Circuit - Figure 26
-
490
-
µJ
-
310 450
µJ
IGBT and Diode at T_J = 125°C -
I_CE = 40A,
-
V_CE = 390V,
-
V_GE = 15V,
R_G = 3Ω
-
L = 100µH
-
Test Circuit - Figure 26
-
27
-
ns
32
-
ns
110 150
ns
77
90
ns
400 450
µJ
750 850
µJ
-
688 950
µJ
I_EC =40A, dI_EC/dt = 200A/µs
-
I_EC = 1A, dI_EC/dt = 200A/µs
-
75
90
ns
50
60
ns
Thermal Characteristics
R_θJC Thermal Resistance Junction-Case
IGBT
Diode
-
-
0.2 °C/W
0.75 °C/W
NOTE:
2_ao._{sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2}Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny6p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEd_{OioNd1eisisthaet}
turn-on loss
the same T_J
3_tJh._{EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt} )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl _{otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecE}rhi=lnogs0sALs)o.tsaAsr.ltliTndhgeivsaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGK60N6S2D Rev. A1