FGH80N60FD Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
2000
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
Figure 14. Turn-On Characteristics vs.
Collector Current
200
Common Emitter
V_GE = 15V, R_G = 10Ω
100 ^{TC = 25oC}
t_r
T_C = 125^oC
t_d(on)
10
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 15. Turn-Off Characteristics vs.
Collector Current
500
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
10
20
40
60
80
Collector Current, I_C [A]
Figure 16. Switching Loss vs Gate Resistance
5
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
1
E_on
E_off
20
20
40
60
80
Collector Current, I_C [A]
Figure 17. Switching Loss vs Collector Current
10
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
E_on
T_C = 125^oC
1
E_off
0.3
0
10
20
30
40
50
Gate Resistance, R_G [Ω]
0.1
20
40
60
Collector Current, I_C [A]
FGH80N60FD Rev. A
80
6
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