FGH80N60FD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
T_C = 25^oC
15V
20V
12V
120
10V
80
Figure 2. Typical Saturation Voltage
Characteristics
160
T_C = 125^oC
15V
20V
12V
120
10V
80
40
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteritics
160
Common Emitter
V_GE = 15V
120
T_C = 25^oC
T_C = 125^oC
80
40
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
160
Common Emitter
V_CE = 20V
T_C = 25^oC
120 _{TC = 125}o_C
80
40
40
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
3.5 ^{Temperature at Variant Current Level}
3.0
2.5
2.0
1.5
1.0
25
80A
40A
20A
Common Emitter
V_GE = 15V
50
75
100
125
Case Temperature, T_C [^oC]
0
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. Vge
20
Common Emitter
T_C = 25^oC
16
12
8
40A
4
80A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
4
FGH80N60FD Rev. A
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