FGH80N60FD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT

Electrical Characteristics of the Diode T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
V_FM
Diode Forward Voltage
I_F = 20A
T_C = 25°C
T_C = 125°C
t_rr
Diode Reverse Recovery Time
T_C = 25°C
I_ES =20A, dI_ES/dt = 200A/µs ^{TC = 125°C}
I_rr
Diode Reverse Recovery Current
T_C = 25°C
T_C = 125°C
Q_rr
Diode Reverse Recovery Charge
T_C = 25°C
T_C = 125°C
Min.
-
-
-
-
-
-
-
-
Typ.
2.3
1.7
36
105
2.6
7.8
46.8
409
Max
2.8
-
-
-
-
-
-
-
Units
V
ns
ns
nC
3
FGH80N60FD Rev. A
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