FGH80N60FD Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT

FGH80N60FD
600V, 80A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V_CE(sat) =1.8V @ I_C = 40A
• High input impedance
• Fast switching
• RoHS complaint
Applications
• Induction Heating Application
December 2007
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating applications where low conduction and
switching losses are essential.
E
C
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(Diode)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
Ratings
600
± 20
80
40
160
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.43
1.5
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FGH80N60FD Rev. A
www.fairchildsemi.com