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FGH80N60FD Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGH80N60FD
FGH80N60FDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 250uA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125°C
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 400 V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 400 V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 400 V, IC = 40A,
VGE = 15V
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
--
±400
nA
4.5
5.5
7.0
V
--
1.8
2.4
V
--
2.05
--
V
--
2110
--
pF
--
200
--
pF
--
60
--
pF
--
21
--
ns
--
56
--
ns
--
126
--
ns
--
50
100
ns
--
1
1.5
mJ
--
0.52
0.78
mJ
--
1.52
2.28
mJ
--
20
--
ns
--
54
--
ns
--
131
--
ns
--
70
--
ns
--
1.1
--
mJ
--
0.78
--
mJ
--
1.88
--
mJ
--
120
--
nC
--
14
--
nC
--
58
--
nC
2
FGH80N60FD Rev. A
www.fairchildsemi.com
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