FGH80N60FD Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600V, 80A Field Stop IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge
20
Common Emitter
T_C = 125^oC
16
Figure 8. Capacitance Characteristics
5000
4000
Common Emitter
V_GE = 0V, f = 1MHz
C_iss
T_C = 25^oC
12
8
40A
4
80A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_cc = 100V
9
200V
300V
6
3
0
0
50
100
150
Gate Charge, Q_g [nC]
Figure 11. Turn-Off Switching SOA
Characteristics
200
100
3000
2000
C_oss
1000
C_rss
0
0.1
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteeristics
400
100
10µs
100µs
10
1ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse T_C = 25^oC
Curves must be derated
linearly with increase
in temperature
10 ms
DC
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-On Characteristics vs.
Gate Resistance
200
100
10
Safe Operating Area
1 ^{VGE = 20V, TC = 100oC}
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
t_r
10
5
0
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
5
FGH80N60FD Rev. A
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