FGA50S110P Datasheet, PDF (6/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

Typical Performance Characteristics
Figure 19. Transient Thermal Impedance of IGBT
0.6
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.05
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
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6
FGA50S110P Rev. C1
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