FGA50S110P Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
t_r
100
10
1
10
t_d(on)
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
50
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Gate Resistance
10000
E_on
1000
100
10
E_off
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 50A
T_C = 25^oC
T_C = 175^oC
20
30
40
50
60
Gate Resistance, R_G [Ω]
Figure 17. Turn off Switching
SOA Characteristics
200
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
t_d(off)
t_f
100
10
10
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
50
Collector Current, I_C [A]
Figure 16. Switching Loss vs. Collector Current
5000
E_on
1000
100
10
Common Emitter
E_off
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 175^oC
20
30
40
50
Collector Current, I_C [A]
Figure 18. Forward Characteristics
100
10
Safe Operating Area
V_GE = 15V, T_C = 175^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
10
1
0.1
0
T_C = 25^oC
T_C = 175^oC
1
2
3
4
Forward Voltage, V_F [V]
©2013 Fairchild Semiconductor Corporation
5
FGA50S110P Rev. C1
www.fairchildsemi.com