FGA50S110P Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

Package Marking and Ordering Information
Device Marking
FGA50S110P
Device
FGA50S110P
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
I_CES
I_GES
Collector Cut-Off Current
G-E Leakage Current
V_CE = 1100 V, V_GE = 0 V
V_GE = V_GES, V_CE = 0 V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
V_FM
Diode Forward Voltage
I_C = 50 mA, V_CE = V_GE
I_C = 50 A, V_GE = 15 V
T_C = 25^oC
I_C = 50 A , V_GE = 15 V
T_C = 125^oC
I_C = 50 A, V_GE = 15 V,
T_C = 175^oC
I_F = 50 A, T_C = 25^oC
I_F = 50 A, T_C = 175^oC
-
-
1
mA
-
-
±500
nA
4.5
5.6
7.5
V
-
2.06
2.6
V
-
2.54
-
V
-
2.7
-
V
-
1.96
2.6
V
-
2.67
-
V
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V_CE = 30 V_, V_GE = 0 V,
f = 1 MHz
V_CC = 600 V, I_C = 50 A,
R_G = 10 Ω, V_GE = 15 V,
Resistive Load, T_C = 25^oC
V_CC = 600 V, I_C = 50 A,
R_G = 10 Ω, V_GE = 15 V,
Resistive Load,, T_C = 175^oC
V_CE = 600 V, I_C = 50 A,
V_GE = 15 V
-
2056
-
pF
-
47.8
-
pF
-
35.8
-
pF
-
24
-
ns
-
294
-
ns
-
280
-
ns
-
95
-
ns
-
2240
-
uJ
-
990
-
uJ
-
3230
-
uJ
-
24
-
ns
-
346
-
ns
-
308
-
ns
-
184
-
ns
-
2640
-
uJ
-
1820
-
uJ
-
4460
-
uJ
-
195
-
nC
-
15.4
-
nC
-
99.9
-
nC
©2013 Fairchild Semiconductor Corporation
2
FGA50S110P Rev. C1
www.fairchildsemi.com