FGA50S110P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

FGA50S110P
1100 V, 50 A Shorted-anode IGBT
August 2013
Features
• Intrinsic Anti-parallel Diode for Soft-switching Applications
• High Switching Frequency Range 10 kHz to 50kHz
• High Temperature Stable Behavior (Tjmax = 175^oC)
• Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A
• Robust Pot Detection Noise Immunity
• RoHS Compliant (Pb-free lead plating)
Applications
• Induction Cooker, Rice-jar, and Microwave Oven
• Soft-switching Applications
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for switching applications.
This device is tailored to induction cooker and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Notes:
1: Limited by Tjmax
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
G
E
Ratings
1100
± 25
50
30
120
50
30
300
150
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
o_C
o_C
o_C
Unit
o_C/W
o_C/W
©2013 Fairchild Semiconductor Corporation
1
FGA50S110P Rev. C1
www.fairchildsemi.com