FGA50S110P Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
T_C = 25^oC
17V
15V
100
20V 12V
10V
80
60
40
20
0
0.0
9V
8V
V_GE = 7V
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 175oC}
60
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.5
Common Emitter
4.0 ^{VGE = 15 V}
3.5
100 A
3.0
2.5
50 A
2.0
1.5
I_C = 25 A
1.0
25
50 75 100 125 150 175
Case Temperature, T_C [^oC]
Figure 2. Typical Output Characteristics
120
T_C = 175^oC ^20V
17V
15V
12V
100
80
60
40
20
0
0.0
10V
9V
8V
V_GE = 7V
2.0
4.0
6.0
8.0
10.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25oC}
T_C = 175^oC
80
60
40
20
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
15
50A
10
I_C = 25A
Common Emitter
T_C = 25^oC
100A
5
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
©2013 Fairchild Semiconductor Corporation
3
FGA50S110P Rev. C1
www.fairchildsemi.com