FGA50S110P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 1100 V, 50 A Shorted-anode IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 175^oC
15
50A
10
I_C = 25A
5
100A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 200V
600V
9
400V
6
3
0
0 30 60 90 120 150 180 210
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
1000
t_d(on)
100
10
7
10
t_r
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 50A
T_C = 25^oC
T_C = 175^oC
20
30
40
50
60
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
5000
C_ies
1000
100
C_oes
Common Emitter
V_GE = 0V, f = 1MHz
C_res
T_C = 25^oC
10
15
10
15
20
25
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
150
100
10μs
10
100μs
1
*Notes:
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
0.1
1
10
10ms
1ms
DC
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5000
1000
t_d(off)
100
10
5
10
t_f
Common Emitter
V_CC = 600V, V_GE = 15V
I_C = 50A
T_C = 25^oC
T_C = 175^oC
20
30
40
50
60
Gate Resistance, R_G [Ω]
©2013 Fairchild Semiconductor Corporation
4
FGA50S110P Rev. C1
www.fairchildsemi.com