2N5086 Datasheet, PDF (6/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Typical Common Emitter Characteristics (f = 1.0KHz)
1.6
1.4
h _fe and h _ie
1.2
1
h_oe
0.8
f = 1.0 kHz
0.6 ^I C^{= 1.0 mA}
T_A = -25°C
0.4
0
-5
-10
-15
-20
-25
V _CE- COLLECTOR-EMITTE R VOLTAGE (V)
Typical Common Emitter Characteristics
100
h_oe
10
h _fe
1
0.1 ^{f = 1.0 kHz}
h ie
V_CE = -5.0V
T_A = -25°C
0.01
0.1 0.2
0.5
1
2
5
10
I _C - COLLECTOR CURRE NT (mA)
Typical Common Emitter Characteristics
2 _{VCE = -5.0V}
1.8 I C= 1.0 mA
h ie
f = 1.0 kHz
1.6
1.4
h fe
1.2
1 ^{h fe and hoe}
hoe
0.8
0.6
h ie
0.4
-60 -40 -20 0
20 40 60 80 100
T _A - AMBIE NT TEMP ERATURE ( °C)
Typical Common Emitter Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003