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| 2N5086 Datasheet, PDF (1/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR | |||
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2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
⢠This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
3
1
TO-92
1. Emitter 2. Base 3. Collector
2
1
SOT-23
Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0
-50
V(BR)CBO Collector-Base Breakdown Voltage
IC = -100µA, IE = 0
-50
ICEO
Collector Cutoff Current
VCB = -10V, IE = 0
VCB = -35V, IE = 0
ICBO
Emitter Cutoff Current
VEB = -3.0V, IC = 0
On Characteristics
hFE
DC Current Gain
IC = -100µA, VCE = -5.0V
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
5086 150
5087 250
5086 150
5087 250
5086 150
5087 250
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = -10mA, IB = -1.0mA
IC = -1.0mA, VCE = -5.0V
fT
Current Gain Bandwidth Product
IC = -500µA, VCE = -5.0V, f = 20MHz 40
Ccb
Collector-Base Capacitance
VCB = -5.0V, IE = 0, f = 100KHz
hfe
Small-Signal Current Gain
IC = -1.0mA, VCE = -5.0V,
f = 1.0KHz
5086 150
5087 250
NF
Noise Figure
IC = -100µA, VCE = -5.0V
RS = 3.0kâ¦, f = 1.0KHz
5086
5087
Max.
-10
-50
-50
500
800
-0.3
-0.85
4.0
600
900
3.0
2.0
Units
V
V
nA
nA
nA
V
V
MHz
pF
dB
dB
* Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2.0%
IC = -20µA, VCE = -5.0V
RS = 10kâ¦
f = 10Hz to 15.7KHz
5086
5087
3.0
dB
2.0
dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
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