 English |
|
|
|
|
|
|
|
| 2N5086 Datasheet, PDF (2/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR | |||
| |||
| ◁ |
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6â Ã 1.6â Ã 0.06."
2N5086
2N5087
625
5.0
83.3
200
Max.
*MMBT5087
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese