2N5086 Datasheet, PDF (4/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Typical Characteristics(Continuce)
350
300 ^{VCE = 5V}
250
200
150
100
50
0
0.1
1
10
100
I _C - COLLECTOR CURRENT (mA)
Figure 7. Gain Bandwidth Product
vs Collector Current
5
V _CE = 5V
4
3
I
C
=
-
250
µ^µA^µ,
µ
Rµ
S^µ=
5.0
kΩ^ΩΩ
Ω
Ω
Ω
2
I
C
=
-
500
µ^µA^µ,
µ
Rµ
S^µ=
1.0
kΩ^ΩΩ
Ω
Ω
Ω
1
I
C
=
-
20
µµAµ,
R_µ^µ _Sµ=
10
kΩΩΩ
Ω
Ω
Ω
0
100
1000
10000
f - FREQUENCY (Hz)
1000000
Figure 8. Noise Figure vs Frequency
8
6
I _C = 1_µµ0^µµ_µµA
4
2 ^{I C = 10µ}µ^0µµ_µµ^A
V CE = 5V
BANDWIDTH = 15.7 kHz
0
1,000
2,000
5,000 10,000 20,000 _Ω 50,000
R _S - SOURCE RESISTANCΩE_Ω( Ω_Ω)
Ω
100,000
Figure 9. Wideband Noise Frequency
vs Source Resistance
625
500
375 ^SOT-23
250
125
0
0
25
TO-92
50
75
100
125
150
TEMPERATURE (^oC)
Figure 10. Power Dissipation vs
Ambient Temperature
10
5 ^VCE ^{= - 5.0V}
2
1
0.5
i
n
i
,nf,i=fn1=,0f10.=0H1kz0HkzHz
0.2
0.1
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (mA)
Figure 11. Equivalent Input Noise Current
vs Collector Current
0.1
0.05 ^{VCE = - 5.0V}
0.02
0.01
0.005
e _n , f = 100 Hz
e _n , f = 1.0 kHz
0.002
e _n , f = 10 kHz
0.001
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (mA)
Figure 12. Equivalent Input Noise Voltage
vs Collector Current
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003