2N5086 Datasheet, PDF (5/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Typical Characteristics (Continuce)
1,000,000
100,000
1.0 _dB
4.06.0d1Bd0BdB
2.0 _dB
10,000
1,000
4.0 _dB
106.d0BdB
VCE = - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz
100
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (mA)
Figure 13. Contours of Constanct
Narrow Band Noise Figure
1,000,000
100,000
10,000
1,000
5.08.d01Bd2BdB
3.0 _dB
V CE = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
128.d05B.d0BdB
100
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (mA)
Figure 14. Contours of Constanct
Narrow Band Noise Figure
1,000,000
100,000
10,000
1,000
4.06.d01B0dBdB
V CE = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
4.0 _dB
106d.0BdB
100
0.001
0.01
0.1
1
I _C - COLLECTOR CURRENT (mA)
Figure 15. BContours of Constant
Narrow Band Noise Figure
10,000
5,000
2,000
1,000
500
4.0 _dB
6.0 _dB
V CE = - 5V
f = 10 MHz
200 _BANDWIDTH
= - 2 kHz
100
0.01
0.1
1
10
I _C - COLLECTOR CURRENT (mA)
Figure 16. Contours of Constant
Narrow Band Noisd Figure
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003