2N5086 Datasheet, PDF (3/9 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Typical Characteristics
350
300 125 °C
V _CB = 5V
250
200 _{25 °C}
150
100 ^{- 40 °C}
50
0.01 0.03 0.1 0.3 1 3 10 30 100
I _C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
β
β_β
β
0.3
β = 10^β
0.25
0.2
0.15
0.1
0.05
0
0.1
125 °C
25 °C
- 40 °C
1
10
I C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40 °C
25 °C
125 °C
β
β^β
β^β = 10
β
1
10
50
I _C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1
0.8
- 40 °C
0.6
25 °C
0.4
125 °C
0.2
V_CE = 5V
0
0.1
1
10
25
I_C - COLLECTOR CURRE NT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
100
V_CB = 40V
10
1
0.1
20
f = 1 MHz
16
12
8
C _ibo
4
C _obo
0.01
0
25
50
75
100
125
0
T_A - AMBIENT TEMP ERATURE (° C)
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003