FOD8318 Datasheet, PDF (5/31 Pages) Fairchild Semiconductor – 2.5 A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing

Absolute Maximum Ratings (T_A = 25 ºC unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
T_STG
T_OPR
T_J
T_SOL
Storage Temperature
Operating Temperature
Junction Temperature
Lead Wave Solder Temperature
(no solder immersion)
-40 to +125
ºC
-40 to +100
ºC
-40 to +125
ºC
260 for 10 s
ºC
Refer to page 28 for reflow temperature profile.
I_FAULT
I_O(PEAK)
V_E – V_SS
Fault Output Current
Peak Output Current⁽¹⁾
Negative Output Supply Voltage⁽²⁾
15
mA
3
A
0 to 15
V
V_DD2 – V_E
Positive Output Supply Voltage
-0.5 to 35 – (V_E – V_SS)
V
V_O(peak)
Gate Drive Output Voltage
-0.5 to 35
V
V_DD2 – V_SS
Output Supply Voltage
-0.5 to 35
V
V_DD1
Positive Input Supply Voltage
-0.5 to 6
V
V_IN+, V_IN- and V_RESET Input Voltages
-0.5 to V_DD1
V
V_FAULT
Fault Pin Voltage
-0.5 to V_DD1
V
V_S
Source of Pull-up PMOS Transistor Voltage
V_SS + 6.5 to V_DD2
V
V_DESAT
DESAT Voltage
V_E to V_E + 11
V
I_CLAMP
Peaking Clamping Sinking Current
1.7
A
V_CLAMP
PD_I
PD_O
Miller Clamping Voltage
Input Power Dissipation⁽³⁾⁽⁵⁾
Output Power Dissipation⁽⁴⁾⁽⁵⁾
-0.5 to V_DD2
V
100
mW
600
mW
Notes:
1. Maximum pulse width = 10 µs, maximum duty cycle = 0.2 %.
2. This negative output supply voltage is optional. It’s only needed when negative gate drive is implemented. A schottky
diode is recommended to be connected between V_E and V_SS to protect against a reverse voltage greater than 0.5 V.
Refer to application information, “6. Active Miller Clamp Function” on page 25.
3. No derating required across temperature range.
4. Derate linearly above 64 °C, free air temperature at a rate of 10.2 mW/°C
5. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
©2010 Fairchild Semiconductor Corporation
FOD8318 Rev. 1.1.2
5
www.fairchildsemi.com