P0120008P Datasheet, PDF (8/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
[Typical Performance]
KP028J Application Circuit
Vds=8V, Ids=220mA, Tc=25°C
Frequency characteristics were measured with Pout at 17dBm.
Technical Note
SUMITOMO ELECTRIC
Pout, Gain, IP3, Ids vs Pin
50
45
IP 3
40
Ids
35
30
25
20
Pout
15
Gain
10
-4 -2 0 2 4 6
Pin (dBm)
220
215
210
205
200
195
190
185
8180
IM3, IM5 vs Pout
-40
-45
-50
-55
IM3
-60
IM5
-65
-70
10 12 14 16 18 20 22
Pout (dBm)
IP3 vs Fre quency
44.5
44.0
Vds=8V
43.5
43.0 _Vds=7V
42.5
Vds=6V
42.0
2100 2120 2140 2160 2180
Fre quency (MHz)
IP3 vs Fre quency
45
44 Ids=220mA
43
42 _Ids=190mA
41
40 _Ids=160mA
39
38
2100 2120 2140 2160 2180
Fre quency (MHz)
Gain vs Fre quency
14.5
Gain vs Fre quency
14.5
14.4
14.4
14.3
Vds=6V
Vds=7V
14.2
Vds=8V
14.1
14.3
Ids=160mA
14.2
Ids=220mA
14.1
Ids=190mA
14.0
2100 2120 2140 2160 2180
Fre quency (MHz)
14.0
2100 2120 2140 2160 2180
Fre quency (MHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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