P0120008P Datasheet, PDF (7/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
♦Application Circuit : 2110-2170MHz
Technical Note
SUMITOMO ELECTRIC
C1
RF in (Rs=50Ω)
C2 ^Z1
C4
Z2 _C5
C3
Z3
Z4
L1
R1
C6
D.U.T
C8
Z5
Z6
Z7
L2
RF out (RL=50Ω)
C9 C10
C7
Vg
Vd
KP028J
RF in
C1
C3
C2
C4
L1
C5
R1
C6
Vg
(-0.7~-2V)
C8
L2
C7
Vd
(+8V)
20
S21
10
0
-10
S12
-20
S22
S11
-30
1.9
2.0
2.1
2.2
Frequency (GHz)
C9 C10 _{RF out}
Ref. Des.
R1
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
L1
L2
Value
82Ω
2pF
0.5pF
0.5pF
1pF
2pF
1µF
1µF
4pF
0.5pF
0.5pF
22nH
22nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
Ref.
Electrical length
Designator
@ 2.1GHz (deg)
Z1
3.86
Z2
27.9
Z3
4.08
Z4
13.61
Z5
8.62
Z6
6.38
Z7
45.37
2.3
All microstrip lines have a line impedance of 50_Ω.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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