P0120008P Datasheet, PDF (2/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
♦Typical Characteristics
Technical Note
SUMITOMO ELECTRIC
Power Derating Curve
4
3
2
1
0
0
50
100
150 200
Tc (°C)
1000
750
500
250
00
Transfer Curve
Vgs=0V
-0.5V
-1.0V
-1.5V
-2.0V
2
4
6
8
Vds (V)
♦Load-pull Characteristics (Typical Data)
Tc=25°C, Vds=8V, Ids=220mA, Common Source, Zo=50Ω (Calibrated to device leads)
2.4GHz
S11
2.4GHz _1.2GHz
S22
-0.2
1.2GHz
-0.4
3.0
4.0
5.0
10.0
135
Scale for |S12|
-180
6.0 1.2GHz
45
4.0
S21 ^1.2GHz
2.0
2.4GHz
0
0 0.02
S12 2.4GHz
0
0.04 0.06
-45
-135
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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