P0120008P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
Technical Note
SUMITOMO ELECTRIC
Tc=25°C, Vds=8V, Ids=220mA, Pin=0d Bm
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.55∠ 130.6
Source : 0.75∠ -169.5
Pout max : 14.9d Bm
+j50
+j25
13.65
+j100
14.9
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.36∠ 175.9
Source : 0.75∠ -169.5
IP3 max : 41.5d Bm
+j50
+j100
25Ω
50Ω
100Ω
41.5
25Ω
50Ω
40.25
100Ω
-j25
-j50
-j100
Tc=25°C, Vds=8V, Ids=180mA, Pin=0d Bm
[Pout -Ls tate ]
f = 2.1GHz
Γ_pout : 0.55∠ 133.1
Source : 0.75∠ -169.5
Pout max : 15.0d Bm
+j50
+j25
13.75
+j100
15.0
25Ω
50Ω
100Ω
-j25
-j100
-j50
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
Γ_IP3 : 0.32∠ 144.6
Source : 0.75∠ -169.5
IP3 max : 41.0d Bm
+j50
+j25
38.5
+j100
41.0
25Ω
50Ω
100Ω
-j25
-j100
-j50
-j25
-j50
-j100
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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