P0120008P Datasheet, PDF (4/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
Technical Note
SUMITOMO ELECTRIC
Ids=220mA
80
60
IP3
40
20
Gain
Pout
0
ηadd
-20
IM3
-40
IM3 /Pou t
-60
-80
-100
-15 -10 -5 0 5
Pin (dBm)
10 15 20
Device: P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=220mA
Source Matching: Mag 0.75 Ang -169.5°
Load Matching: Mag 0.36 Ang 175.9°
Ids=180mA
80
60
IP3
40
Pout
20
Gain
0
ηadd
-20
IM3
-40
IM3 /Pou t
-60
-80
-100
-15 -10
-5 0 5
Pin (dBm)
10 15 20
Device : P0120008P
Frequency: f1=2.1GHz f2=2.101GHz
Bias: Vds=8V, Ids=180mA
Source Matching: Mag 0.75 Ang -169.5°
Load Matching: Mag 0.32 Ang 144.6°
[Note] P_out and η _add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=220mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-10.0
4.4
14.4
-68.1
-72.5
40.6
178.4
0.2
-5.0
9.5
14.5
-57.4
-66.8
42.9
173.4
0.6
0.0
14.5
14.5
-41.8
-56.3
42.7
165.8
2.0
5.0
19.5
14.5
-25.5
-45.0
41.8
162.8
6.6
10.0
24.5
14.5
-2.4
-26.8
37.4
170.3
19.8
15.0
29.3
14.3
13.8
-15.5
34.6
202.3
50.6
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id
ηadd
Id=180mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-10.0
4.4
14.4
-66.3
-70.7
39.9
164.9
0.2
-5.0
9.5
14.5
-56.0
-65.5
42.3
159.6
0.7
0.0
14.6
14.6
-41.4
-56.0
42.6
151.8
2.3
5.0
19.6
14.6
-23.7
-43.3
41.3
147.5
7.5
10.0
24.6
14.6
0.8
-23.8
36.0
156.1
22.2
15.0
29.3
14.3
13.6
-15.7
34.6
189.3
53.6
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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