P0120008P Datasheet, PDF (13/13 Pages) Eudyna Devices Inc – 1W GaAs Power FET (Pb-Free Type)

P0120008P
1W GaAs Power FET (Pb-Free Type)
Technical Note
SUMITOMO ELECTRIC
♦The information in this document is subject to change without notice. Please refer for the most
up-to-date information before you start design using SEI’s devices.
♦Any part of this document may not be reproduced or copied.
♦SEI does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from the use of SEI’s products described in this documents. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights
of SEI or others.
♦Descriptions of circuits and other related information in this document are for illustrative purpose in the
examples of the device operation and application. SEI does not assume any responsibility for any losses
incurred by customers or third parties arising from the use of the circuits and other related information in
this document.
♦SEI’s semi-conductor device products are designed and manufactured for use in the standard
communication equipment. Customers that wish to use these products in applications not intended by SEI
must contact SEI’ sales representatives in advance.
♦Generally, it is impossible to eliminate completely the defects in semi-conductor products, while SEI has
been continually improving the quality and reliability of the products. SEI does not assume any
responsibility for any losses incurred by customers or third parties by or arising from the use of SEI’s
semi-conductor products. Customers are to incorporate sufficient safety measures in the design such as
redundancy, fire-containment and anti-failure features.
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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