P0120003P Datasheet, PDF (7/13 Pages) Eudyna Devices Inc – 800mW GaAs Power FET (Pb-Free Type)

P0120003P
800mW GaAs Power FET (Pb-Free Type)
♦Application Circuit : 2110-2170MHz
Technical Note
SUMITOMO ELECTRIC
RF in (Rs=50Ω)
C1
C2
Z1
D.U.T
Z2
L1
R1
C3
C4 ^{RF out (RL=50Ω)}
Z3
Z4
L2
C5
Vg
Vd
RF in
20
10
0
-10
-20
-30
1.9
KP023J
C1
L1
C2
R1
C3
Vg
(-0.7~-2V)
C4
L2
C5
Vd
(+6V)
S22
RF out
Ref. Des.
R1
C1
C2
C3
C4
C5
L1
L2
Value
82Ω
1pF
1pF
0.1µF
4pF
0.1µF
27nH
27nH
Part Number
SUSUMU
RR0816 series
MURATA
GRM18 series
TOKO LL1608
series
S21
S11
S12
Ref.
Electrical length
Designator
@ 2.1GHz (deg)
Z1
4.08
Z2
13.61
Z3
8.62
Z4
6.38
All microstrip lines have a line impedance of 50_Ω.
2
2.1
2.2
2.3
Frequency (GHz)
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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