P0120003P Datasheet, PDF (5/13 Pages) Eudyna Devices Inc – 800mW GaAs Power FET (Pb-Free Type)

P0120003P
800mW GaAs Power FET (Pb-Free Type)
Tc=25°C, Vds=6V, Ids=220mA, Pin=0d Bm
Technical Note
SUMITOMO ELECTRIC
[Pout -Ls tate ]
f = 2.1GHz
+j25
Γ_pout : 0.46∠ 135.5
Source : 0.76∠ -166.1
Pout max : 14.4d Bm
+j50
13.15
+j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.52∠ -155.9
Source : 0.73∠ -170.1
IP3 max : 40.45d Bm
+j50
+j100
14.4
25Ω
50Ω
100Ω
25Ω ^39.2
50Ω
40.45
100Ω
-j25
-j100
-j50
Tc=25°C, Vds=6V, Ids=180mA, Pin=0d Bm
[Pout -Ls tate ]
f = 2.1GHz
+j25
Γ_pout : 0.46∠ 138.7
Source : 0.76∠ -166.1
Pout max : 14.4d Bm
+j50
+j100
13.9
14.4
25Ω
50Ω
100Ω
-j25
-j50
-j100
[ IP3 - Ls ta te]
f1 = 2.1GHz
f2 = 2.101GHz
+j25
Γ_IP3 : 0.42∠ -160.2
Source : 0.73∠ -170.1
IP3 max : 39.3d Bm
+j50
+j100
36.8
25Ω
50Ω
39.3
100Ω
-j25
-j100
-j25
-j100
-j50
-j50
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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