P0120003P Datasheet, PDF (4/13 Pages) Eudyna Devices Inc – 800mW GaAs Power FET (Pb-Free Type)

P0120003P
Technical Note
800mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
Ids=220mA
80
60
IP3
40
20
Gain
Pout
0
ηadd
-20
IM3
-40
IM3/Pou t
-60
-80
-100
-20 -15 -10
-5 0 5
Pin (dBm)
10 15 20
Device : P0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=220mA
Source Matching: Mag 0.61 Ang -159.3°
Load Matching: Mag 0.48 Ang -155.4°
Ids=180mA
80
60
IP3
40
Pout
20
Gain
0
ηadd
-20
IM3
-40
IM3 /Pou t
-60
-80
-100
-20 -15 -10
-5 0 5
Pin (dBm)
10 15 20
Device :P 0120003P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias :Vds =6V,Ids =180 mA
Source Matching:Mag 0.61 Ang -159.3°
Load Matching: Mag 0.437 Ang -160.7°
[Note] P_out and η _add are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Pin
Pout
Gain
IM3 IM3/Pout
IP3
Id=220mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
-15.0
-2.0
13.0
-75.0
-73.0
34.5
-10.0
3.2
13.2
-70.2
-73.3
39.9
-5.0
8.1
13.1
-59.5
-67.7
42.1
0.0
13.1
13.1
-46.0
-59.0
42.6
5.0
18.0
13.0
-28.5
-46.5
41.0
10.0
23.1
13.1
-2.5
-25.7
35.2
15.0
27.6
12.6
11.1
-16.5
33.8
Id
(mA)
220.5
219.1
216.4
212.0
205.3
207.5
252.6
ηadd
(%)
0.0
0.2
0.5
1.5
4.9
15.7
35.8
Pin
Pout
Gain
IM3
IM3/Pout
IP3
Id
ηadd
Id=180mA _(dBm)
(dBm)
(dB)
(dBm)
(dBc)
(dBm)
(mA)
(%)
-15.0
-1.7
13.3
-75.4
-73.7
35.1
178.2
0.1
-10.0
3.5
13.5
-68.7
-72.2
39.6
177.1
0.2
-5.0
8.4
13.4
-56.1
-64.5
40.7
174.8
0.6
0.0
13.4
13.4
-41.3
-54.7
40.7
171.2
2.0
5.0
18.4
13.4
-23.0
-41.3
39.0
165.1
6.6
10.0
23.4
13.4
0.6
-22.8
33.9
173.1
20.1
15.0
27.6
12.6
11.1
-16.5
34.0
216.4
41.9
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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