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P0120003P Datasheet, PDF (1/13 Pages) Eudyna Devices Inc – 800mW GaAs Power FET (Pb-Free Type)
P0120003P
Technical Note
800mW GaAs Power FET (Pb-Free Type) SUMITOMO ELECTRIC
♦Features
· Up to 2.7 GHz frequency band
· Beyond +27 dBm output power
· Up to +43dBm Output IP3
· High Drain Efficiency
· 12dB Gain at 2.1GHz
· SOT-89 SMT Package
· Low Noise Figure
♦Applications
·Wireless communication system
·Cellular, PCS, PHS, W-CDMA, WLAN
♦Description
P0120003P is a high performance GaAs MESFET housed in
a low-cost SOT-89 package. Our originally developed
"pulse-doped" channel structure has realized low distortion,
which leads to high IP3. The channel structure also achieved
an extremely low noise figure. The details about pulse-doped
FET channel are described in our products catalog.
Utilization of AuSn die attach has realized a low and stable
thermal resistance. The lead frame is plated with Sn-Bi to
make the device Pb-free.
SEI’s long history of manufacturing has cultivated high
device reliability. The estimated MTTF of the FET is longer
than 15years at Tj of 150°C. You can see the details in
Reliability and Quality Assurance.
♦Functional Diagram
4
Pin No. Function
1
Input/Gate
2, 4
Ground
3 Output/Drain
♦Ordering Information
Part No
Description
P0120003P GaAs Power FET
KP023J
2.11-2.17GHz
Application Circuit
123
Number
of devices
1000
1
Container
7” Reel
Anti-static
Bag
♦Absolute Maximum Ratings (@Tc=25°C)
Parameter
Symbol Value Units
Drain-Source Voltage Vds
8
V
Gate-Source Voltage Vgs
-4
V
Drain Current
Ids
Idss
---
RF Input Power
(continuous)
Pin
20 (*)
dBm
Power Dissipation
Pt
2.2
W
Junction Temperature Tj
125
°C
Storage Temperature Tstg - 40 to +125 °C
Tc: Case Temperature. Operating the device beyond any of these
values may cause permanent damage.
(*) Measured at 2.1GHz with our test fixture matched to OIP3.
♦Electrical Specifications (@Tc=25°C)
Parameter
DC Saturated Drain Current
Transconductance
Pinchoff Voltage
Symbol
Idss
gm
Vp
Gate-Source Breakdown Voltage
Thermal Resistance
RF Frequency
Output Power
@ 1dB Gain Compression
Small Signal Gain
Output IP3
Power Added Efficiency
|Vgs0|
Rth
f
P1dB
G
OIP3
ηadd
Test Conditions
Vds=3V, Vg=0V
Vds=6V, Ids=300mA
Vds=6V, Ids=30mA
Igso= - 30µA
Channel-Case
Vds=6V
Ids=220mA
f=2.1GHz
Values
Min. Typ. Max.
--- --- 850
250 --- ---
- 3.0 --- - 1.7
Units
mA
mS
V
3.0 ---
---
V
--- --- 45 °C/W
2.7 GHz
29 --- dBm
12 --- dB
--- 43 --- dBm
--- 56 --- %
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail : GaAsIC-ml@ml.sei.co.jp Web Site: www.sei.co.jp/GaAsIC/
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