P0120003P Datasheet, PDF (6/13 Pages) Eudyna Devices Inc – 800mW GaAs Power FET (Pb-Free Type)

P0120003P
800mW GaAs Power FET (Pb-Free Type)
♦NF Characteristics
Ids=220mA
Ids=180mA
Technical Note
SUMITOMO ELECTRIC
Ids=160mA
1.55
-0.2
-0.4
2.05
3.0
4.0
5.0
10.0
-0.2
-0.4
1.49
1.99
3.0
4.0
5.0
10.0
-0.2
-0.4
1.43
1.93
3.0
4.0
5.0
10.0
[Note] The data for Smith charts were measured at frequency of 2GHz and Tc of 25°C.
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.58
0.55
0.72
0.77
0.95
0.98
1.07
1.16
1.55
Γop t
M ag Ang(deg)
0.43 -90.8
0.35 -35.4
0.28
13.4
0.36
61.4
0.40
99.2
0.47 129.9
0.51 159.5
0.55 -173.9
0.47 -141.6
Vds=6V
Rn/50
0.09
0.13
0.16
0.16
0.13
0.09
0.05
0.04
0.12
Ids=220mA
Associated
Gain(dB)
21.8
20.3
18.6
17.6
16.5
15.7
15.0
14.3
13.4
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.51
0.51
0.65
0.71
0.90
0.91
0.99
1.08
1.49
Γop t
M ag Ang(deg)
0.44 -89.2
0.33 -42.7
0.27
6.7
0.33
56.8
0.34
96.5
0.45 127.5
0.48 157.2
0.53 -176.2
0.42 -140.2
Vds=6V
Rn/50
0.08
0.11
0.14
0.13
0.13
0.08
0.05
0.04
0.12
Ids=180mA
Associated
Gain(dB)
21.9
19.9
18.3
17.3
16.2
15.5
14.8
14.1
13.2
Freq.
(GHz)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
NFmin
(dB)
0.53
0.49
0.63
0.69
0.88
0.89
0.96
1.04
1.43
Γop t
M ag Ang(deg)
0.43 -93.5
0.33 -45.3
0.26
3.9
0.32
54.5
0.34
94.5
0.43 125.8
0.46 156.0
0.52 -177.3
0.41 -141.5
Vds=6V
Rn/50
0.08
0.11
0.14
0.14
0.12
0.09
0.05
0.04
0.12
Ids=160mA
Associated
Gain(dB)
21.6
19.8
18.2
17.2
16.1
15.4
14.7
14.1
13.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Ids=220mA
Ids=180mA
Ids=160mA
0.5
1.0
1.5
Frequency (GHz)
2.0
2.5
Specifications and information are subject to change without notice.
2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: [phone] Fax: [phone] e-mail : [e-mail] Web Site: www.sei.co.jp/GaAsIC/
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