NT256D64SH8B0GM Datasheet, PDF (12/15 Pages) List of Unclassifed Manufacturers – 200pin Unbuffered DDR SO-DIMM

NT256D64SH8B0GM
256MB : 32M x 64
PC2100 Unbuffered DDR SO-DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; V_DDQ = 2.5V ± 0.2V; V_DD = 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
Symbol
Parameter
tIS
tIPW
tRPRE
tRPST
Address and control input setup time
(slow slewrate)
Input pulse width
Read preamble
Read postamble
-75B
Min.
Max.
1.0
2.2
0.9
1.1
0.40
0.60
Unit Notes
2-4,
ns
10-12,
14
ns 2-4, 12
tCK
1-4
tCK
1-4
tRAS
Active to Precharge command
45
120,000 ns
1-4
tRC
Active to Active/Auto-refresh command period
65
ns
1-4
Auto-refresh to Active/Auto-refresh command
tRFC
75
period
ns
1-4
tRCD
Active to Read or Write delay
20
ns
1-4
tRAP
Active to Read Command with Autoprecharge
20
ns
1-4
tRP
Precharge command period
20
tRRD
Active bank A to Active bank B command
15
ns
1-4
ns
1-4
tWR
tDAL
tWTR
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
15
(tWR/tCK )
+
(tRP/tCK )
1
ns
1-4
tCK 1-4, 13
tCK
1-4
tPDEX
Power down exit time
7.5
ns
1-4
tXSNR
Exit self-refresh to non-read command
75
ns
1-4
tXSRD
Exit self-refresh to read command
200
tCK
1-4
tREFI
Average Periodic Refresh Interval
7.8
µs
1-4, 8
REV 1.3
01/2003
12
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