LM3S608 Datasheet, PDF (386/416 Pages) List of Unclassifed Manufacturers – Microcontroller

Electrical Characteristics
19.1.5
19.2
19.2.1
Parameter Parameter Name
I_{DD_DEEPSLEEP} Deep-Sleep mode
Conditions
LDO = 2.25 V
Peripherals = All OFF
System Clock = MOSC/16
Nom Max Unit
950 1150 μA
Flash Memory Characteristics
Table 19-5. Flash Memory Characteristics
Parameter Parameter Name
Min Nom Max Unit
PE_CYC Number of guaranteed program/erase cycles before failure^a 1000 -
- cycles
T_RET Data retention at average operating temperature of 85˚C
10 - - years
T_PROG Word program time
20 - - µs
T_ERASE Page erase time
20 - - ms
T_ME Mass erase time
200 - - ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 19-1. Load Conditions
pin
C_L = 50 pF
GND
19.2.2
Clocks
Table 19-6. Phase Locked Loop (PLL) Characteristics
Parameter Parameter Name
Min Nom Max Unit
f_{ref_crystal} Crystal reference^a
3.579545 - 8.192 MHz
f_{ref_ext}
f_pll
External clock reference^a 3.579545 - 8.192 MHz
PLL frequency^b
-
200 - MHz
T_READY PLL lock time
-
- 0.5 ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
(RCC) register.
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 19-7. Clock Characteristics
Parameter Parameter Name
f_IOSC
Internal oscillator frequency
Min Nom Max Unit
7 12 22 MHz
386
October 01, 2007
Preliminary