EN29F800 Datasheet, PDF (33/38 Pages) List of Unclassifed Manufacturers – 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

EN29F800
Figure 10. Alternate CE# Controlled Write Operation Timings
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Addresses
VA
tWC
tAS
tAH
WE#
OE#
CE#
tGHEL
tWS
Data
RY/BY#
tRH
Reset#
tWH
tCP
tCPH
tDS
tDH
0xA0 for Program
0x55 for Erase
tCWHWH1 / tCWHWH2 / tCWHWH3
tBUSY
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
Status
DOUT
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
Dout = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last staus read cycle
Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command
sequence.
4800 Great America Parkway, Suite 202
33
Santa Clara, CA 95054
Rev. E, Issue Date: 2001/07/05
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