EN29F800 Datasheet, PDF (21/38 Pages) List of Unclassifed Manufacturers – 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
EN29F800
Symbol
Parameter
Test Conditions
I_LI
I_LO
I_CC1
I_CC2
I_CC3
V_IL
V_IH
V_OL
V_OH
V_ID
I_ID
V_LKO
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL
(read) CMOS Byte
(read) CMOS Word
Supply Current (Standby - TTL)
(Standby - CMOS) ⁽¹⁾
Supply Current (Program or Erase)
Input Low Voltage
0V≤ V_IN ≤ Vcc
0V≤ V_OUT ≤ Vcc
CE# = V_IL; OE# = V_IH;
f = 5MHz
CE# = V_IH
BYTE# = RESET# =
CE# = Vcc ± 0.2V
Byte program, Sector or
Chip Erase in progress
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply voltage (Erase and
Program lock-out)
I_OL = 2 mA
I_OH = -2.5 mA
I_OH = -100 µA
A9 = VID
Min
-0.5
2
2.4
Vcc -
0.4V
10.5
3.2
Typ ^{Max Unit}
±5
µA
±5
µA
19
30
mA
20
40
mA
28
50
mA
0.4
1.0
mA
0.3
5.0
µA
30
60
mA
0.8
V
Vcc ±
0.5
V
0.45
V
V
V
11.5
V
100
µA
4.2
V
Notes:
(1) BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS
supply voltages
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Santa Clara, CA 95054
Rev. E, Issue Date: 2001/07/05
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