EN29F800 Datasheet, PDF (28/38 Pages) List of Unclassifed Manufacturers – 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

EN29F800
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming
Time
Byte
Word
Erase/Program Endurance
Typ
1
19
7
7
8.2
4.1
100K
Limits
Max
8
35
300
300
24.5
12.2
Unit
Comments
sec
Excludes 00H programming prior
to erasure
sec
µs
µs
Excludes system level overhead
sec
cycles ^{Minimum 100K cycles guaranteed}
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE )
Min
-1.0 V
Max
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
C_IN
Input Capacitance
V_IN = 0
6
7.5
C_OUT
Output Capacitance
V_OUT = 0
8.5
12
C_IN2
Control Pin Capacitance
V_IN = 0
7.5
9
Unit
pF
pF
pF
Table 15. DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
Test Conditions
Min
150°C
10
125°C
20
Unit
Years
Years
4800 Great America Parkway, Suite 202
28
Santa Clara, CA 95054
Rev. E, Issue Date: 2001/07/05
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