M12L128168A2L Datasheet, PDF (4/45 Pages) Elite Semiconductor Memory Technology Inc. – ABSOLUTE MAXIMUM RATINGS

ESMT
M12L128168A (2L)
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T_A = 0 to 70 °C
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
I_CC1
I_CC2P
I_CC2PS
I_CC2N
I_CC2NS
I_CC3P
I_CC3PS
Burst Length = 1, t_RC ≥ t_RC(min), I_OL = 0 mA
CKE ≤ V_IL(max), t_CC = t_CC(min)
CKE & CLK ≤ V_IL (max), t_CC = ∞
CKE ≥ V_IH(min), CS ≥ V_IH(min), t_CC = t_CC(min)
Input signals are changed one time during 2t_CC
CKE ≥ V_IH(min), CLK ≤ V_IL(max), t_CC = ∞
input signals are stable
CKE ≤ V_IL(max), t_CC = t_CC(min)
CKE & CLK ≤ V_IL(max), t_CC = ∞
Active Standby Current
in non power-down mode
(One Bank Active)
I_CC3N
I_CC3NS
CKE ^≥ V_IH(min), ^{CS ≥} V_IH(min), t_CC=15ns
Input signals are changed one time during 2clks
All other pins ^≥ V_DD-0.2V or ^≤ 0.2V
CKE ≥ V_IH(min), CLK ≤ V_IL(max), t_CC = ∞
input signals are stable
Operating Current
(Burst Mode)
I_CC4
I_OL = 0 mA, Page Burst, 2 Banks activated
Refresh Current
Self Refresh Current
I_CC5
t_RFC ≥ t_RFC(min)
I_CC6
CKE ≤ 0.2V
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Version
-5 -6 -7
Unit Note
110 100 90 mA 1,2
2
mA
2
20
mA
10
6
mA
6
25
mA
15
mA
140 130 120 mA 1,2
210 190 170 mA
2
mA
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.3
4/45