M12L128168A2L Datasheet, PDF (32/45 Pages) Elite Semiconductor Memory Technology Inc. – ABSOLUTE MAXIMUM RATINGS

ESMT
Page Read Cycle at Different Bank @ Burst Length = 4
M12L128168A (2L)
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.3
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