M12L128168A2L Datasheet, PDF (33/45 Pages) Elite Semiconductor Memory Technology Inc. – ABSOLUTE MAXIMUM RATINGS

ESMT
Page Write Cycle at Different Bank @ Burst Length = 4
M12L128168A (2L)
*Note: 1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.3
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