EN29GL064_11 Datasheet, PDF (63/64 Pages) Eon Silicon Solution Inc. – 64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only

Appendix
1. INTRODUCTION
ERRATA SHEET
EN29GL064
This errata sheet describes the functional deviation known at the release date of this
document.
2. Problem
Write Buffer Program timing problem
In general, the address setup time to CE# is 0ns. Due to timing problem, it may program to
wrong address by Write Buffer Program function if address setup time is 0ns~1.5ns.
3. Work-around
For Write Buffer Program function, we recommend minimum 5ns address to CE# setup time
(address valid 5ns before CE# goes low).
In the case where CE# is kept low throughout the program buffer to flash command entry,
A[max:12] should not be changes between Data=25h, Data=WC cycles to last Data= PD
cycles and Data=29h cycle.
Address
5ns
CE#
WE#
Data
Address Stable
This Data Sheet may be revised by subsequent versions
63
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. M, Issue Date: 2011/04/13
www.eonssi.com